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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD320N20N3GBTMA1MOSFET N-CH 200V 34A TO252-3 Infineon Technologies |
0 | - |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29 nC @ 10 V | ±20V | 2350 pF @ 100 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD600N25N3GBTMA1MOSFET N-CH 250V 25A TO252-3 Infineon Technologies |
0 | - |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29 nC @ 10 V | ±20V | 2350 pF @ 100 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IRFH4201TRPBFMOSFET N-CH 25V 49A 8PQFN Infineon Technologies |
0 | - |
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Datasheet |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 49A (Ta) | 4.5V, 10V | 0.95mOhm @ 50A, 10V | 2.1V @ 150µA | 94 nC @ 10 V | ±20V | 6100 pF @ 13 V | - | 3.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IRF2807ZMOSFET N-CH 75V 75A TO220AB Infineon Technologies |
0 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3270 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF5210LMOSFET P-CH 100V 40A TO262 Infineon Technologies |
0 | - |
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Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 60mOhm @ 24A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRLHM630TR2PBFMOSFET N-CH 30V 21A PQFN Infineon Technologies |
0 | - |
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Datasheet |
- | 8-VQFN Exposed Pad | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 40A (Tc) | - | 3.5mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62 nC @ 4.5 V | - | 3170 pF @ 25 V | - | - | - | - | - | Surface Mount | PQFN (3x3) |
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IRFS7762TRLPBFMOSFET N-CH 75V 85A D2PAK Infineon Technologies |
0 | - |
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Datasheet |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 85A (Tc) | 6V, 10V | 6.7mOhm @ 51A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4440 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRF3711LMOSFET N-CH 20V 110A TO262 Infineon Technologies |
0 | - |
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Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44 nC @ 4.5 V | ±20V | 2980 pF @ 10 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 |
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GS-065-011-1-L-TRGS-065-011-1-L-TR Infineon Technologies Canada Inc. |
0 | - |
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- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 6V | 190mOhm @ 3.2A, 6V | 2.6V @ 2.4mA | 2.2 nC @ 6 V | +7V, -10V | 70 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
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IRF1404ZSTRLMOSFET N-CH 40V 180A D2PAK Infineon Technologies |
0 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 4340 pF @ 25 V | - | 220W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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