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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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应用所有
结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7488TRPBFMOSFET N-CH 80V 6.3A 8SO Infineon Technologies |
0 | - |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 6.3A (Ta) | 10V | 29mOhm @ 3.8A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±20V | 1680 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IPAW60R600P7SXKSA1MOSFET N-CH 600V 6A TO220 Infineon Technologies |
0 | - |
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Datasheet |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 21W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPB80N04S304ATMA1MOSFET N-CH 40V 80A TO263-3 Infineon Technologies |
0 | - |
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Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.8mOhm @ 80A, 10V | 4V @ 90µA | 80 nC @ 10 V | ±20V | 5200 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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SPB80N06S2-H5MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
0 | - |
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Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 5.5mOhm @ 80A, 10V | 4V @ 230µA | 155 nC @ 10 V | ±20V | 5500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRF7493TRMOSFET N-CH 80V 9.3A 8SO Infineon Technologies |
0 | - |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 9.3A (Tc) | 10V | 15mOhm @ 5.6A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±20V | 1510 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRLR4343MOSFET N-CH 55V 26A DPAK Infineon Technologies |
0 | - |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42 nC @ 10 V | ±20V | 740 pF @ 50 V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFB4229PBFXKMA1TRENCH >=100V Infineon Technologies |
0 | - |
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- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 46A (Tc) | 10V | 46mOhm @ 26A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4560 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFR2605MOSFET N-CH 55V 19A D-PAK Infineon Technologies |
0 | - |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 85mOhm @ 11A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 50W (Tc) | - | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF8010STRRPBFMOSFET N-CH 100V 80A D2PAK Infineon Technologies |
0 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 15mOhm @ 45A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3830 pF @ 25 V | - | 260W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF630NSTRLPBFMOSFET N-CH 200V 9.3A D2PAK Infineon Technologies |
0 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 575 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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